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DMN3110S
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
t ≦ 10sec
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
2.5
2.0
3.3
2.7
3.8
3.1
2.7
2.1
25
A
A
A
A
A
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6) t ≦ 10sec
Thermal Resistance, Junction to Ambient (Note 6) t ≦ 10sec
Operating and Storage Temperature Range
Symbol
P D
R ? JA
P D
R ? JA
P D
R ? JA
T J, T STG
Value
0.74
173.4
1.3
99.1
1.8
72
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
30
-
-
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
-
-
-
-
1.0
±100
μ A
nA
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
-
-
-
-
-
54
88
4.8
0.75
3.0
73
110
-
1.0
V
m ?
mS
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 3.1A
V GS = 4.5V, I D = 2A
V DS = 10V, I D = 3.1A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
305.8
39.9
39.5
1.4
4.1
8.6
1.2
1.5
2.6
4.6
13.1
2.5
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V,f = 1.0MHz
V GS = 10V, V DS = 10V,
I D = 3A
V DD = 15V, V GS = 10V,
R L = 47 ? , R G = 3 ? ,
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate
7. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3110S
Document number: DS31561 Rev. 3 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
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